Chemical vapor deposition of titanium

ABSTRACT

A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.

RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.09/030,705, filed Feb. 25, 1998 now U.S. Pat. No. 6,143,362, which ishereby incorporated by reference in its entirety.

FIELD OF THE INVENTION

The present invention relates to a method for manufacturingsemiconductor devices, and more particularly, to a method for depositingtitanium layers on a substrate.

BACKGROUND OF THE INVENTION

Device density in integrated circuits (ICs) is constantly beingincreased. To enable the increase in density, device dimensions arebeing reduced. As the dimensions of device contacts get smaller, devicecontact resistance increases, and device performance is adverselyaffected. Methods for decreasing device contact resistance in ICs areneeded to obtain enhanced device and IC performance.

Device contacts with reduced resistance may be created by formingcertain metals on a silicon semiconductor base layer. These metals reactwith the underlying silicon, for example, to form silicides. Silicidedevice contacts are desirable because they reduce the native oxide onsilicon. The native oxide is undesirable because it increases thecontact resistance.

In one embodiment, titanium is used to form silicide device contacts fortwo reasons. First, titanium silicide has superior gettering qualities.Also, titanium silicide forms low resistance contacts on bothpolysilicon and single-crystal silicon.

Titanium silicide device contacts are normally formed with the followingprocess. First, a thin layer of titanium is formed on top of the siliconbase layer, such as a substrate. The titanium adjoins active regionsexposed by contact holes in an isolating layer, such as an oxide, abovethe silicon base layer. Then, the silicon base layer is annealed. As aresult, the titanium reacts with the active regions of silicon to formtitanium silicide.

However, because titanium cannot be readily deposited in a pure form,additional processing steps are required to form titanium silicidedevice contacts. Titanium precursors, such as titanium tetrachloride,are commonly available and can be used to form titanium. Titaniumtetrachloride, though, can only be reduced at temperatures exceeding1000 degrees Celsius with certain reducing agents. At thesetemperatures, the silicon base layer will be damaged. Therefore, thereis a need for a method of forming titanium from titanium precursors atlower temperatures.

Furthermore, the resistance of device contacts can be adverselyincreased by conductive layers coupled between the device contacts andother components. The conductive layers may be formed by the same metallayer used to form the device contacts. As device dimensions shrink, thecontact holes become relatively deeper and narrower. Also, the walls ofthe contact holes become steeper, and closer to vertical. As a result,most metal deposition techniques form conductive layers havingrelatively small step coverage, and hence relatively high resistance.Step coverage is the ratio of the minimum thickness of a film as itcrosses a step, to the nominal thickness of the film on flat regions,where thickness is generally measured perpendicular to the surfaces ofthe step and flat regions, and where the resultant value is usuallyexpressed as a percentage. Thus, the effective contact resistance isincreased at lower values of step coverage. Therefore, there is also aneed for a method of forming conductive layers having increased stepcoverage to reduce effective device contact resistance.

Conformal layers of titanium having good step coverage have beenpreviously formed at lower temperatures with chemical vapor deposition.Such techniques are disclosed in U.S. Pat. Nos. 5,173,327, 5,273,783 and5,278,100, which are hereby incorporated by reference. However,alternative, effective and efficient techniques for forming titaniumfilms are desired.

SUMMARY OF THE INVENTION

The present invention provides a method, and a corresponding resultingstructure, for forming conformal titanium films supported on a substrateof an integrated circuit (IC) by forming a seed layer supported by thesubstrate, and then reducing a titanium precursor with the seed layer.In one embodiment, the seed layer comprises a main group elementselected from the group consisting of zinc, cadmium, mercury, aluminum,gallium, indium, tin, silicon, germanium, lead, arsenic and antimony.The seed layer is formed by combining a first precursor and a reducingagent by chemical vapor deposition (CVD). Then, titanium is formed bycombining a second precursor with the seed layer by CVD.

In another embodiment, the present invention may further comprise thestep of annealing the titanium to form titanium silicide.

In another embodiment, forming the seed layer further comprises forminga seed layer according to the following chemical process (I):

MR_(x)+H₂→M+alkanes,

wherein:

M is a main group element selected from the group consisting of zinc,cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium,lead, arsenic and antimony;

R is an alkyl group; and

x is some integer value determined by the valence of M.

In one embodiment, chemical process (I) is performed at a temperaturebetween approximately 100 and 600 degrees Celsius.

In yet another embodiment, the step of forming titanium furthercomprises the step of combining the seed layer with the second precursorthat is titanium tetrachloride according to the following chemicalprocess (II):

TiCl₄+M→Ti+MCl_(x).

In one embodiment, chemical process (II) is performed at a temperaturebetween approximately 100 and 600 degrees Celsius.

In yet another embodiment, titanium may be formed in a single stepaccording to the following chemical process (III):

TiCl₄+M (source)→Ti+MCl_(x)

In one embodiment, chemical process (III) is performed at a temperaturebetween approximately 100 and 700 degrees Celsius.

In yet a further embodiment, the present invention may be an ICcomprising a layer of a titanium alloy, coupled to a titanium silicidecontact. In yet another embodiment, the present invention may be amemory comprising a memory array operatively coupled to a controlcircuit and an I/O circuit. The memory array, control circuit and I/Ocircuit comprise a layer of a titanium alloy coupled to titaniumsilicide contacts. In yet another embodiment, the titanium alloy maycomprise titanium and an element selected from the group consisting ofzinc, cadmium, mercury, aluminum, gallium, indium, tin, silicon,germanium, lead, arsenic and antimony. In still another embodiment, thetitanium alloy may comprise titanium and zinc.

It is a benefit of the present invention that high step coverage metallayers can be formed. Further features and advantages of the presentinvention, as well as the structure and operations of variousembodiments of the present invention, are described in detail below withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1A is a cross-sectional view of a contact hole that has been etchedthrough an insulative layer to an underlying semiconductor substrate.

FIG. 1B is a cross-sectional view of the contact hole of FIG. 1A,comprising titanium and titanium silicide film.

FIG. 2 is a cross-sectional view of the contact hole of FIG. 1A,comprising a film of second reducing agent.

FIG. 3A is a cross-sectional view of the contact hole of FIG. 1A,comprising a titanium film.

FIG. 3B is a block diagram of a memory.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings which form a part hereof,and in which is shown by way of illustration specific preferredembodiments in which the inventions may be practiced. These embodimentsare described in sufficient detail to enable persons skilled in the artto practice the invention, and it is to be understood that otherembodiments may be utilized and that logical, mechanical and electricalchanges may be made without departing from the spirit and scope of thepresent invention. The terms wafer and substrate used in the followingdescription include any semiconductor-based structure having an exposedsurface with which to form the integrated circuit structure of theinvention. Wafer and substrate are used interchangeably to refer tosemiconductor structures during processing, and may include other layersthat have been fabricated thereupon. Both wafer and substrate includedoped and undoped semiconductors, epitaxial semiconductor layerssupported by a base semiconductor or insulator, as well as othersemiconductor structures well known to one skilled in the art. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims.

The subsequently described methods will be in the context of using zincas a metal seed layer. However, other seed layers are suitable for usewith the various embodiments of the invention, as will be described.

In order to manufacture a device contact in an integrated circuit 19, acontact hole 10, as shown in FIG. 1A, is etched through an insulatinglayer 12, such as borophosphosilicate glass (BPSG) or silicon dioxide(SiO₂). As a result, an active region 17 of underlying semiconductorbase layer or substrate 14, is exposed. A device contact is then formedon the exposed active region 17 in the following manner.

Chemical vapor deposition (CVD) is used to form a conformal layer oftitanium or titanium alloy on the integrated circuit 19 by asubsequently described method. CVD is further described in U.S. Pat. No.5,278,100. In one embodiment, the conformal layer has a step coverage ofat least one hundred percent in the contact hole 10, even for a highaspect ratio contact hole (i.e., a contact hole that is much deeper thanit is wide). As a result, a low resistance layer of titanium or titaniumalloy 16 is formed on the insulating layer 12, as shown in FIG. 1B. Aportion of the layer 16 is formed as a low resistance device contact 18of titanium silicide over the active region 17.

In another embodiment, a cold wall-hot substrate reactor is used to formthe conformal layer of titanium or titanium alloy. In one embodiment, acold wall-hot substrate reactor is used for blanket depositions as thisdesign is efficient in regard to precursor consumption. In oneembodiment, first, a conformal film of a seed layer 22 comprising zincis deposited on the insulator 12 and substrate 14, as shown in FIG. 2.The seed layer 22 is formed with CVD by combining a first reducing agent24 with a first precursor 26, which are injected into the CVD reactorwhich is represented in block form at 29. In another embodiment, theseed layer 22 that is zinc may be formed by combining a first precursor26 that is a dialkyl zinc or trimethyl zinc compound with a reducingagent 24 that is hydrogen.

When performing this step, the integrated circuit 19 is mounted on asubstrate holder in the CVD reactor 29. The substrate 14 is heated to atemperature within a range of approximately 100 to 600 degrees Celsiusand at a pressure approximately between 1 millitorr and 1 atmosphere.Alternatively, the temperature may range from approximately 300 to 550degrees Celsius, or approximately 350 to 450 degrees Celsius. In oneembodiment, the temperature is approximately 400 degrees Celsius. Also,alternatively, the pressure may range from approximately 10 millitorr to100 torr. In one embodiment, the pressure is approximately 1 torr. Acarrier gas of helium, argon or nitrogen may be used at a flow rate ofbetween approximately 1 and 200 sccm. Alternatively, the flow rate mayrange between approximately 20 sccm and 1 liter. In one embodiment, thepressure is approximately 200 sccm. The first precursor 26 and thereducing agent 24 contact the heated silicon base layer and insulatinglayer 12, and form the seed layer 22 on the integrated circuit 19. Thischemical process (I) is exemplified below:

ZnR₂ (gas)+H₂ (gas)→Zn (solid)+alkanes (gas),  (I)

where R is an alkyl group.

First reaction products 28, such as gaseous alkanes, resulting from theformation of the seed layer 22 exit from the CVD reactor 29 through anexhaust manifold. The thickness of the seed layer 22 formed on theintegrated circuit 19 is between approximately 5 and 50 angstroms.However, the present invention envisions forming a seed layer 22 that isthicker.

Next, the seed layer 22 is converted to a layer 16 of titanium or atitanium alloy. As illustrated in FIG. 3A, a titanium precursor 32, suchas titanium tetrachloride, is combined with the seed layer 22 by CVD toform a conformal layer 16 of titanium or titanium alloy in lieu of theseed layer 22.

When performing this step, the integrated circuit 19 is mounted andheated in the CVD reactor 29 to a temperature within a range ofapproximately 100 to 600 degrees Celsius and at a pressure approximatelybetween 1 millitorr and 1 atmosphere. Alternatively, the temperature mayrange from approximately 100 to 700 degrees Celsius, approximately 300to 550 degrees Celsius, or approximately 350 to 450 degrees Celsius. Inone embodiment, the temperature is approximately 400 degrees Celsius.Also, alternatively, the pressure may range from approximately 10millitorr to 100 torr. In one embodiment, the pressure is approximately1 torr. A carrier gas of helium, argon or nitrogen may be used at a flowof between approximately 1 and 200 sccm. Alternatively, the flow ratemay range between approximately 20 sccm and 1 liter. In one embodiment,the pressure is approximately 200 sccm. When the titanium precursor 32contacts the seed layer 22 on the integrated circuit 19, the compoundsform a conformal layer 16 of titanium or a titanium alloy. The chemicalprocess (II) is exemplified below:

TiCl₄ (gas)+Zn (solid)→Ti (solid)+ZnCl₂ (gas)  (II)

Second reaction products 34 resulting from the formation of the titaniumor titanium alloy exit from the CVD reactor 29 through the exhaustmanifold. Part or all of the seed layer 22 is converted to a layer 16 oftitanium or titanium alloy. If this process step is conducted for asufficient period of time, all of the seed layer 22 will be converted toa layer 16 of titanium. However, if not all of the seed layer 22 isconverted to a layer 16 of titanium, a layer 16 of titanium alloy,including the seed layer 22, will be formed on the integrated circuit19. These steps may be repeated to form thicker layers.

In another embodiment, the layer 16 of titanium or titanium alloy can beformed during a single CVD step, as exemplified by chemical process(III) below:

TiCl₄+Zn (source)→Ti+ZnCl₂  (III)

The zinc can be provided from one of many types of sources, includinggaseous and solid sources. In one embodiment of such a single CVD step,the seed and titanium layers 22, 16 can be formed substantiallysimultaneously. The titanium or titanium alloy layer 16 can be formed bycombining a first precursor 26, such as a dialkyl or trimethyl zinccompound, with a reducing agent 24, such as hydrogen, and a titaniumprecursor 32, such as titanium tetrachloride. When performing the CVDstep, the integrated circuit 19 is mounted and heated in the CVD reactor29 to a temperature within a range of approximately 100 to 600 degreesCelsius at a pressure of approximately between 1 millitorr and 1atmosphere. Alternatively, the temperature may range from approximately100 to 700 degrees Celsius, approximately 300 to 550 degrees Celsius, orapproximately 350 to 450 degrees Celsius. In one embodiment, thetemperature is approximately 400 degrees Celsius. Also, alternatively,the pressure may range from approximately 10 millitorr to 100 torr. Inone embodiment, the pressure is approximately 1 torr. A carrier gas ofhelium, argon or nitrogen may be used at a flow rate of betweenapproximately 1 and 200 sccm. Alternatively, the flow rate may rangebetween approximately 20 sccm and 1 liter. In one embodiment, thepressure is approximately 200 sccm. When the first precursor 26 and thereducing agent 24 contact the heated silicon base layer and insulatinglayer 12, they form the seed layer 22 on the integrated circuit 19.Then, when the titanium precursor 32 contacts the seed layer 22, aconformal layer 16 of titanium or titanium alloy is formed on theintegrated circuit. The resulting layer 16 of titanium or titanium alloyhas a thickness between approximately 5 and 50 angstroms. However, thepresent invention envisions forming a thicker layer 16 titanium ortitanium alloy. The chemical process (IV) is exemplified below:

ZnR₂ (gas)+H₂ (gas)+TiCl₄ (gas)→Ti (solid)+ZnCl₂ (gas)+alkanes(gas),  (IV)

where R is an alkyl group.

The reaction products 28, 34 exit from the CVD reactor 29 through theexhaust manifold.

Subsequently, the integrated circuit 19 is annealed at a temperature ofbetween approximately 250 to 750 degrees Celsius. Alternatively, thetemperature may range from approximately 250 to 800 degrees Celsius. Inone embodiment, the temperature is approximately 700 degrees Celsius. Asa result, the titanium in the layer 16 of titanium or titanium alloyproximate to the silicon is converted to titanium silicide (TiSi, TiSi₂,Ti₃Si₅ or combinations thereof) to form the low resistance devicecontact 18. For via level applications, the anneal is not required. Thevia comprises a tungsten or aluminum fill on top of the layer 16 whichis formed on top of a conductor (also represented by reference number17) with an optional TiN layer therebetween.

In yet another embodiment, the low resistance device contact 18 oftitanium silicide may be formed over the active region 17 when the layer16 of titanium or titanium alloy is formed by CVD on the integratedcircuit 19 at a temperature of between approximately 250 to 750 degreesCelsius. Alternatively, the temperature may range from approximately 250to 800 degrees Celsius. In one embodiment, the temperature isapproximately 700 degrees Celsius. Upon device contact 18 formation,additional metal layers, such as titanium nitride and tungsten, may besubsequently formed over the device contact 18 and layer 16 of titaniumor titanium alloy.

In another embodiment, the integrated circuit 19 is a memory 300 in FIG.3B, such as a dynamic random access memory. The memory 300 may includean array of memory cells 302, control circuit 304, I/O circuit, wordline decoder 308, digit, or bit, line decoder 310, and sense amplifier312 coupled in a manner known to one skilled in the art. Each of theaforementioned elements of the memory 300 includes contacts 18 andlayers 16 of titanium, or titanium alloy, formed in the manner describedabove.

As noted above, other seed layers are suitable for use with the variousembodiments of the invention. In one embodiment, the first precursor 26is an alkane of the form MR_(x), where M is an element selected from thegroup consisting of zinc, cadmium, mercury, aluminum, gallium, indium,tin, silicon, germanium, lead, arsenic and antimony; R is an alkylgroup; and x is some integer value determined by the valence of M. Thevalue of x is generally equal to a valence of M, e.g., when M has avalence of 3 as does aluminum, x equals 3. M may be capable of havingmore than one valence. Such alkane precursors may be used to form theseed layer 22. Chemical process (I) for the formation of seed layer 22may then be written in its more general form:

MR_(x) (gas)+H₂ (gas)→M (solid)+alkanes (gas),  (I),

wherein:

M is an element selected from the group consisting of zinc, cadmium,mercury, aluminum, gallium, indium, tin, silicon, germanium, lead,arsenic and antimony;

R is an alkyl group; and

x is some integer value equal to the valence of M.

In similar fashion, chemical process (II) for the formation of the layer16 of titanium or titanium alloy may be written more generally as:

TiCl₄ (gas)+M (solid)→Ti (solid)+MCl_(x) (gas)  (II)

wherein:

M is an element selected from the group consisting of zinc, cadmium,mercury, aluminum, gallium, indium, tin, silicon, germanium, lead,arsenic and antimony; and

x is some integer value equal to the valence of M.

In another embodiment, where the formation of the layer 16 of titaniumor titanium alloy is performed in a single step, chemical process (III)may be written more generally as:

TiCi₄+M (source)→Ti+MCl_(x)  (III)

wherein:

M is an element selected from the group consisting of zinc, cadmium,mercury, aluminum, gallium, indium, tin, silicon, germanium, lead,arsenic and antimony; and

x is some integer value equal to the valence of M.

In a further embodiment, where the formation of the layer 16 of titaniumor titanium alloy is performed in a single CVD step, chemical process(IV) may be written more generally as:

MR_(x) (gas)+H₂ (gas)+TiCl₄ (gas)→Ti (solid)+MCl_(x) (gas)+alkanes(gas),  (IV)

wherein:

M is an element selected from the group consisting of zinc, cadmium,mercury, aluminum, gallium, indium, tin, silicon, germanium, lead,arsenic and antimony;

R is an alkyl group; and

x is some integer value equal to the valence of M.

The various embodiments of the present invention provide high stepcoverage, low resistivity titanium silicide device contacts to silicon,or titanium contacts to metal at the via level, formed at a relativelylow temperature. Use of the various alkane precursors permits formationof a titanium layer without depletion of an underlying silicon or otherbase layer.

It is to be understood that the above description is intended to beillustrative, and not restrictive. Many other embodiments will beapparent to those of skill in the art upon reviewing the abovedescription. For example, other titanium precursors, such astetradimethyl amino titanium (TDMAT) can be used to form layers 16 anddevice contacts 18. Additionally, the present invention may beimplemented with any CVD apparatus 29, including hot wall reactors, coldwall reactors, radiation beam assisted reactors, plasma-assistedreactors, and the like. Furthermore, the seed layer 22 may be formed inany manner which provides a desired thickness film. Hence, the scope ofthe invention should, therefore, be determined with reference to theappended claims, along with the full scope of equivalents to which suchclaims are entitled.

What is claimed is:
 1. A method for forming a titanium layer in acontact hole passing through an insulating layer supported by asemiconductor substrate, comprising: forming a seed layer in the contacthole by combining a first precursor with a first reducing agent; andforming the titanium layer in the contact hole by combining atitanium-containing precursor with the seed layer in a chemical processthat separates titanium in the titanium-containing precursor from asecond element in the titanium-containing precursor.
 2. A method forforming a titanium layer in a contact hole passing through an insulatinglayer supported by a semiconductor substrate, comprising: forming a seedlayer in the contact hole by combining a first precursor with a firstreducing agent, wherein the first precursor is a compound having analkyl group; and forming the titanium layer in the contact hole bycombining a titanium-containing precursor with the seed layer in achemical process that separates titanium in the titanium-containingprecursor from a second element in the titanium-containing precursor. 3.The method of claim 1, further comprising annealing the titanium layerto form titanium silicide.
 4. The method of claim 1, wherein forming aseed layer comprises forming a seed layer in accordance with thefollowing chemical process (I): MR_(x)+H₂→M+alkanes,  (I) wherein: M isan element selected from the group consisting of zinc, cadmium, mercury,aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic andantimony; R is an alkyl group; and x is some integer value equal to thevalence of M.
 5. A method for forming a titanium layer supported by asubstrate, comprising: forming a seed layer supported by the substrateby combining a first precursor with a first reducing agent; and formingthe titanium layer supported by the substrate by combining atitanium-containing precursor with the seed layer; wherein forming aseed layer comprises forming a zinc seed layer in accordance with thefollowing chemical process (I): ZnR₂+H₂→Zn+alkanes,  (I)  wherein: R isan alkyl group.
 6. The method of claim 4, wherein forming a seed layeris performed at a temperature between approximately 100 and 600 degreesCelsius.
 7. The method of claim 1, wherein forming the titanium layercomprises forming the titanium layer in accordance with the followingchemical process (II): TiCl₄+M→Ti+MCl_(x)  (II)  wherein: M an elementselected from the group consisting of zinc, cadmium, mercury, aluminum,gallium, indium, tin, silicon, germanium, lead, arsenic and antimony;and x is some integer value equal to the valence of M.
 8. The method ofclaim 1, wherein forming the titanium layer comprises forming thetitanium layer in accordance with the following chemical process (II):TiCl₄+Zn→Ti+ZnCl₂.  (II)
 9. The method of claim 7, wherein forming thetitanium layer in accordance with chemical process (II) is performed ata temperature between approximately 100 and 600 degrees Celsius.
 10. Themethod of claim 1, wherein forming the titanium layer further comprisesforming titanium silicide.
 11. The method of claim 10, wherein formingtitanium silicide comprises forming titanium silicide at a temperatureof between approximately 250 to 750 degrees Celsius.
 12. The method ofclaim 1, wherein forming the titanium layer comprises forming thetitanium layer comprising a titanium alloy.
 13. The method of claim 12,wherein forming the titanium layer comprising a titanium alloy comprisesa titanium alloy containing titanium and an element selected from thegroup consisting of zinc, cadmium, mercury, aluminum, gallium, indium,tin, silicon, germanium, lead, arsenic and antimony.
 14. A method forforming a titanium layer supported by a substrate, comprising: forming aseed layer supported by the substrate by combining a first precursorwith a first reducing agent; and forming the titanium layer supported bythe substrate by combining a titanium-containing precursor with the seedlayer; wherein forming the titanium layer comprises forming the titaniumlayer comprising a titanium alloy containing titanium and zinc.
 15. Amethod for forming a titanium layer in a contact hole passing through aninsulating layer of an integrated circuit, comprising: forming a seedlayer in the contact hole by combining a first precursor with a reducingagent with chemical vapor deposition (CVD); and forming the titaniumlayer in the contact hole by combining the seed layer with a secondprecursor with CVD; wherein the seed layer is formed according to thefollowing chemical process (I): MR_(x)+H₂→M+alkanes,  (I)  wherein: M anelement selected from the group consisting of zinc, cadmium, mercury,aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic andantimony; R is an alkyl group; and x is some integer value equal to thevalence of M; wherein chemical process (I) is performed at a temperaturegreater than 400 degrees Celsius; and wherein the titanium layer isformed according to the following chemical process (II):TiCl₄+M→Ti+MCl_(x),  (II) wherein chemical process (II) is performed ata temperature greater than 400 degrees Celsius.
 16. A method for forminga titanium layer in a contact hole passing through an insulating layerof an integrated circuit, comprising: forming a seed layer in thecontact hole by combining a first precursor with a reducing agent withchemical vapor deposition (CVD); forming the titanium layer in thecontact hole by combining the seed layer with a second precursor withCVD; wherein the seed layer is zinc, and formed according to thefollowing chemical process (I): ZnR₂+H₂→Zn+alkanes,  (I) wherein R is analkyl group and chemical process (I) is performed at a temperaturegreater than 400 degrees Celsius; and wherein the titanium layer isformed according to the following chemical process (II):TiCl₄+Zn→Ti+ZnCl₂,  (II) wherein chemical process (II) is performed at atemperature greater than 400 degrees Celsius.
 17. The method of claim15, further comprising annealing the titanium layer to form titaniumsilicide.
 18. The method of claim 15, wherein forming the titanium layerfurther comprises forming titanium silicide.
 19. The method of claim 18,wherein forming the titanium silicide comprises forming titaniumsilicide at a temperature of between approximately 250 to 750 degreesCelsius.
 20. The method of claim 15, wherein forming the titanium layercomprises forming the titanium layer comprising a titanium alloy. 21.The method of claim 15, wherein forming the titanium layer comprising atitanium alloy comprises a titanium alloy containing titanium and anelement selected from the group consisting of zinc, cadmium, mercury,aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic andantimony.
 22. A method for forming a titanium layer on an integratedcircuit, comprising: forming a seed layer on the integrated circuit bycombining a first precursor with a reducing agent with chemical vapordeposition (CVD); and forming the titanium layer on the integratedcircuit by combining the seed layer with a second precursor with CVD;wherein the seed layer is formed according to the following chemicalprocess (I): MR_(x)+H₂→M+alkanes,  (I)  wherein: M an element selectedfrom the group consisting of zinc, cadmium, mercury, aluminum, gallium,indium, tin, silicon, germanium, lead, arsenic and antimony; R is analkyl group; and x is some integer value equal to the valence of M;wherein chemical process (I) is performed at a temperature greater than400 degrees Celsius; and wherein the titanium layer is formed accordingto the following chemical process (II): TiCl₄+M→Ti+MCl_(x),  (II)wherein chemical process (II) is performed at a temperature greater than400 degrees Celsius and forming the titanium layer comprising a titaniumalloy comprises a titanium alloy containing titanium and zinc.
 23. Amethod for forming a titanium layer in a contact hole passing through aninsulating layer supported by a semiconductor substrate, comprising:forming a seed layer in the contact hole by combining a first precursorwith a first reducing agent, wherein the first precursor is a compoundhaving an alkyl group and wherein the compound further comprises anelement selected from the group consisting of zinc, cadmium, mercury,aluminum, gallium, indium, tin, silicon, germanium, lead, arsenic andantimony; and forming the titanium layer in the contact hole bycombining a titanium-containing precursor with the seed layer in achemical process that separates titanium in the titanium-containingprecursor from a second element in the titanium-containing precursor.24. A chemical vapor deposition method of providing a layer of titaniumin a contact hole of an integrated circuit within a chemical vapordeposition (CVD) reactor, the method comprising: injecting a firstprecursor and reducing agent in the CVD reactor; forming a seed layer inthe contact hole from reaction of the first precursor and the reducingagent, wherein the first precursor is a compound having an alkyl group;injecting a titanium-containing precursor in the CVD reactor; andforming the titanium layer in the contact hole from reaction of thetitanium-containing precursor and the seed layer in a chemical processthat separates titanium in the titanium-containing precursor from asecond element in the titanium-containing precursor.
 25. A chemicalvapor deposition method of providing a layer of titanium in a contacthole of an integrated circuit within a chemical vapor deposition (CVD)reactor, the method comprising: injecting a first precursor and reducingagent in the CVD reactor; forming a seed layer in the contact hole fromreaction of the first precursor and the reducing agent, wherein thefirst precursor is a compound having an alkyl group and wherein thecompound further comprises an element selected from the group consistingof zinc, cadmium, mercury, aluminun, gallium, indium, tin, silicon,germanium, lead, arsenic and antimony; injecting a titanium-containingprecursor in the CVD reactor; and forming the titanium layer in thecontact hole from reaction of the titanium-containing precursor and theseed layer in a chemical process that separates titanium in thetitanium-containing precursor from a second element in thetitanium-containing precursor.
 26. A chemical vapor deposition method ofproviding a layer of titanium on an integrated circuit within a chemicalvapor deposition (CVD) reactor, the method comprising: injecting a firstprecursor and reducing agent in the CVD reactor; forming zinc on theintegrated circuit from a reaction of the first precursor and the firstreducing agent; injecting a second precursor in the CVD reactor; andforming the titanium layer on the integrated circuit from a reaction ofthe second precursor and the zinc.
 27. The method of claim 24, furthercomprising annealing the titanium layer to form titanium silicide. 28.The method of claim 24, wherein forming the seed layer is in accordancewith the following chemical process (I): MR_(x)+H₂→M+alkanes,  (I) wherein: M is an element selected from the group consisting of zinc,cadmium, mercury, aluminum, gallium, indium, tin, silicon, germanium,lead, arsenic and antimony; R is an alkyl group; and x is some integervalue equal to the valence of M.
 29. The method of claim 26, whereinforming the zinc is in accordance with the following chemical process(I): ZnR₂+H₂→Zn+alkanes,  (I) wherein: R is an alkyl group.
 30. Themethod of claim 28, wherein forming the seed layer comprises forming theseed layer according to chemical process (I) at a temperature betweenapproximately 100 and 600 degrees Celsius.
 31. The method of claim 28,wherein forming the titanium layer comprises forming the titanium layerin accordance with the following chemical process (II):TiCl₄+M→Ti+MCl_(x).  (II)
 32. The method of claim 29, wherein formingthe titanium layer comprises forming the titanium layer in accordancewith the following chemical process (II): TiCl₄+Zn→Ti+ZnCl₂.  (II) 33.The method of claim 31, wherein forming the titanium layer comprisesforming the titanium layer according to chemical process (II) at atemperature between approximately 100 and 600 degrees Celsius.
 34. Themethod of claim 24, wherein forming the titanium layer further comprisesforming titanium silicide.
 35. The method of claim 34, wherein formingtitanium silicide comprises forming titanium silicide at a temperatureof between approximately 250 to 750 degrees Celsius.
 36. The method ofclaim 24, wherein forming the titanium layer further comprises forming atitanium alloy containing titanium and an element selected from thegroup consisting of zinc, cadmium, mercury, aluminum, gallium, indium,tin, silicon, germanium, lead, arsenic and antimony.
 37. The method ofclaim 26, wherein forming the titanium layer further comprises forming atitanium zinc alloy layer.
 38. A method for forming a titanium layer ina contact hole passing through an insulating layer supported by asemiconductor substrate, comprising forming the titanium layer in thecontact hole according to the following chemical process (III): TiCl₄+M(source)→Ti+MCl_(x)  (III) wherein: M is an element selected from thegroup consisting of zinc, cadmium, mercury, aluminum, gallium, indium,tin, silicon, germanium, lead, arsenic and antimony; and x is someinteger value equal to the valence of M.
 39. A method for forming atitanium layer in a contact hole passing through an insulating layersupported by a semiconductor substrate, comprising forming the titaniumlayer in the contact hole according to the following chemical process(III): TiCl₄+Zn→Ti+ZnCl₂.  (III)
 40. The method of claim 38, furthercomprising annealing the titanium layer to form titanium silicide.
 41. Amethod for forming a titanium layer in a contact hole passing through aninsulating layer supported by a semiconductor substrate, comprisingforming the titanium layer according to the following chemical process(IV): MR_(x)+H₂+TiCl₄→Ti+MCl_(x)+alkanes,  (IV) wherein: M is an elementselected from the group consisting of zinc, cadmium, mercury, aluminum,gallium, indium, tin, silicon, germanium, lead, arsenic and antimony; Ris an alkyl group; and x is some integer value equal to the valence ofM.
 42. A method for forming a titanium layer supported by a substrate,comprising forming the titanium layer according to the followingchemical process (IV): ZnR₂+H₂+TiCl₄→Ti+ZnCl₂+alkanes,  (IV) wherein: Ris an alkyl group.
 43. The method of claim 41, wherein forming thetitanium layer comprises forming the titanium layer comprising atitanium alloy.